000			01358cam a2200313 a 4500
999			_c1004 _d1004
001			1181245
003			OSt
005			20190504162745.0
008			970626s1997 maua b 001 0 eng
020			_a9781461378358 (pbk. : alk. paper): _cEURO 169.99
040			_cIISER- BPR _dIISER- BPR
082	0	0	_223 _a621.3815 _bRAM/T
222			_aPHYSICS
245	0	0	_aThin film ferroelectric materials and devices/ _cedited by R. Ramesh.
260			_aBoston: _bKluwer Academic Publishers, _cc1997.
300			_avii, 249 p. : _bill. ; _c24 cm.
440		0	_aElectronic materials: science & technology
504			_aIncludes bibliographical references and index.
520			_aThin Film Ferroelectric Materials and Devices is a compilation of current research and development in two very important ferroelectric device technologies, namely ferroelectrics for Dynamic Random Access Memories (DRAM's) and Non-Volatile Ferroelectric Random Access Memories (NV-FRAM's). Given the rapid pace of development and the broad scope of the general topic of ferroelectric materials, readers will benefit from such a focused presentation. Thin Film Ferroelectric Materials and Devices will be of great value to materials and device scientists, device and process engineers, students, and postdoctoral associates. Furthermore, this compilation will serve as a concise introduction for new entrants to this exciting field.
650		0	_aRandom access memory.
650		0	_aFerroelectric thin films.
650		0	_aThin film devices _xMaterials.
650		0	_aPhysics
700	1		_aRamesh, R. _q(Ramamoorthy), _4editor
906			_a7 _bcbc _corignew _d1 _eocip _f19 _gy-gencatlg
942			_2ddc _cBK