Thin film ferroelectric materials and devices/ edited by R. Ramesh.

Contributor(s):

Ramesh, R. (Ramamoorthy) [editor]

Material type: Text

TextSeries: Electronic materials: science & technologyPublication details: Boston: Kluwer Academic Publishers, c1997.Description: vii, 249 p. : ill. ; 24 cmISBN:

9781461378358 (pbk. : alk. paper):

Subject(s):

DDC classification:

23 621.3815 RAM/T

Summary: Thin Film Ferroelectric Materials and Devices is a compilation of current research and development in two very important ferroelectric device technologies, namely ferroelectrics for Dynamic Random Access Memories (DRAM's) and Non-Volatile Ferroelectric Random Access Memories (NV-FRAM's). Given the rapid pace of development and the broad scope of the general topic of ferroelectric materials, readers will benefit from such a focused presentation. Thin Film Ferroelectric Materials and Devices will be of great value to materials and device scientists, device and process engineers, students, and postdoctoral associates. Furthermore, this compilation will serve as a concise introduction for new entrants to this exciting field.

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Holdings
Item type	Current library	Call number	Status	Date due	Barcode
Reference Book	Transit Campus Physics	621.3815 RAM (Browse shelf(Opens below))	Available		003277

Includes bibliographical references and index.

Thin Film Ferroelectric Materials and Devices is a compilation of current research and development in two very important ferroelectric device technologies, namely ferroelectrics for Dynamic Random Access Memories (DRAM's) and Non-Volatile Ferroelectric Random Access Memories (NV-FRAM's). Given the rapid pace of development and the broad scope of the general topic of ferroelectric materials, readers will benefit from such a focused presentation. Thin Film Ferroelectric Materials and Devices will be of great value to materials and device scientists, device and process engineers, students, and postdoctoral associates. Furthermore, this compilation will serve as a concise introduction for new entrants to this exciting field.

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