Thin film ferroelectric materials and devices/ edited by R. Ramesh.
Material type: TextSeries: Electronic materials: science & technologyPublication details: Boston: Kluwer Academic Publishers, c1997.Description: vii, 249 p. : ill. ; 24 cmISBN:- 9781461378358 (pbk. : alk. paper):
- 23 621.3815 RAM/T
Item type | Current library | Call number | Status | Date due | Barcode |
---|---|---|---|---|---|
Reference Book | Transit Campus Physics | 621.3815 RAM (Browse shelf(Opens below)) | Available | 003277 |
Browsing Transit Campus shelves, Shelving location: Physics Close shelf browser (Hides shelf browser)
621.3692 GHA Introduction to fiber optics/ | 621.38 PIE Advanced Semiconductor Fundamentals | 621.3815 LUN Fundamentals of carrier transport/ | 621.3815 RAM Thin film ferroelectric materials and devices/ | 621.395 MEAD Analog VLSI and neural systems/ | 808.0665 SCH Writing science: how to write papers that get cited and proposals that get funded/ |
Includes bibliographical references and index.
Thin Film Ferroelectric Materials and Devices is a compilation of current research and development in two very important ferroelectric device technologies, namely ferroelectrics for Dynamic Random Access Memories (DRAM's) and Non-Volatile Ferroelectric Random Access Memories (NV-FRAM's). Given the rapid pace of development and the broad scope of the general topic of ferroelectric materials, readers will benefit from such a focused presentation. Thin Film Ferroelectric Materials and Devices will be of great value to materials and device scientists, device and process engineers, students, and postdoctoral associates. Furthermore, this compilation will serve as a concise introduction for new entrants to this exciting field.
There are no comments on this title.